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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1033
DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -3 40 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 60 12 100 MIN -60 -60 -5 TYP.
2SB1033
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob
MAX
UNIT V V V
-1.5 -1.5 -10 -10 320 |I |I
V V A A
MHz pF
hFE Classifications D 60-120 E 100-200 F 160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1033
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
3


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